Detailed investigation of the conducting channel in poly(3-hexylthiophene) field effect transistors

Elizabeth von Hauff, Fabian Johnen, Ali Veysel Tunc, Leonid Govor, Juergen Parisi

Research output: Contribution to JournalArticleAcademicpeer-review

Abstract

In this study, the conducting channel in poly(3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) was investigated. The effect of varying the P3HT layer thickness on the OFET parameters was studied. The threshold voltage and the field effect mobility were determined from both the linear and saturation regime of the OFET output characteristics for all film thicknesses and the results are compared and discussed. A gated four probe technique was used to investigate the formation and evolution of the conducting channel by monitoring changes in potential at different points in the channel during measurement. It was found that the device performance of the OFETs was significantly influenced by the thickness of the P3HT layer. Bulk currents were found to dominate device performance for thicker P3HT layers.
Original languageEnglish
Article number063709
JournalJournal of Applied Physics
Volume108
Issue number6
DOIs
Publication statusPublished - 15 Sep 2010

Keywords

  • carrier mobility
  • organic field effect transistors
  • organic semiconductors

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