Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

B. Aslan; R. Turan; H. Liu; J. M. Baribeau; M. Buchanan; P. Chow-Chong

doi:10.1007/s00340-003-1343-z

Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

B. Aslan, R. Turan, H. Liu, J. M. Baribeau, M. Buchanan, P. Chow-Chong

Physics of Living Systems

Research output: Contribution to Journal › Article › Academic › peer-review

Abstract

This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has two Si

Original language	English
Pages (from-to)	225-228
Journal	Applied Physics B. Lasers and Optics
Volume	78
Issue number	2
DOIs	https://doi.org/10.1007/s00340-003-1343-z
Publication status	Published - 2004

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Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

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10.1007/s00340-003-1343-z

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abstract = "This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has two Si",

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AU - Aslan, B.

AU - Turan, R.

AU - Liu, H.

AU - Baribeau, J. M.

AU - Buchanan, M.

AU - Chow-Chong, P.

N1 - Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

PY - 2004

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AB - This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has two Si

U2 - 10.1007/s00340-003-1343-z

DO - 10.1007/s00340-003-1343-z

M3 - Article

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JO - Applied Physics B. Lasers and Optics

JF - Applied Physics B. Lasers and Optics

IS - 2

ER -

Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

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