Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

A. Sharma; N.M.A. Janssen; S.J.G. Matthijssen; D.M. de Leeuw; M. Kemerink; P.A. Bobbert

doi:10.1103/PhysRevB.83.125310

Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

A. Sharma, N.M.A. Janssen, S.J.G. Matthijssen, D.M. de Leeuw, M. Kemerink, P.A. Bobbert

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Abstract

We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced. © 2011 American Physical Society.

Original language	English
Pages (from-to)	125310
Journal	Physical Review B. Condensed Matter and Materials Physics
Volume	83
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.83.125310
Publication status	Published - 2011

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title = "Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor",

abstract = "We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced. {\textcopyright} 2011 American Physical Society.",

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AU - Sharma, A.

AU - Janssen, N.M.A.

AU - Matthijssen, S.J.G.

AU - de Leeuw, D.M.

AU - Kemerink, M.

AU - Bobbert, P.A.

PY - 2011

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N2 - We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced. © 2011 American Physical Society.

AB - We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced. © 2011 American Physical Society.

U2 - 10.1103/PhysRevB.83.125310

DO - 10.1103/PhysRevB.83.125310

M3 - Article

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JO - Physical Review B. Condensed Matter and Materials Physics

JF - Physical Review B. Condensed Matter and Materials Physics

IS - 12

ER -

Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

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