Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

A. Sharma, N.M.A. Janssen, S.J.G. Matthijssen, D.M. de Leeuw, M. Kemerink, P.A. Bobbert

Research output: Contribution to JournalArticleAcademicpeer-review

115 Downloads (Pure)

Abstract

We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced. © 2011 American Physical Society.
Original languageEnglish
Pages (from-to)125310
JournalPhysical Review B. Condensed Matter and Materials Physics
Volume83
Issue number12
DOIs
Publication statusPublished - 2011

Fingerprint

Dive into the research topics of 'Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor'. Together they form a unique fingerprint.

Cite this