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Electron capture in low-energy collisions of Sn3+ ions with H2 and D2

  • K. Bijlsma
  • , E. de Wit
  • , J. L. Pascual
  • , A. Kleinsmit
  • , E. Lalkens
  • , L. Assink
  • , M. Salverda
  • , L. Méndez
  • , O. O. Versolato
  • , I. Rabadán
  • , R. Hoekstra

Research output: Contribution to JournalArticleAcademicpeer-review

Abstract

We report experimental single-electron-capture cross sections for Sn3+ ions impacting on H2 and D2 molecules at low projectile energies, ranging from 0.8 to 153 eV/u. The data were obtained in a crossed-beam-type experiment with a decelerated Sn3+ ion beam and a H2 (D2) gas target. Charge-state resolved Sn ion currents are measured with a retarding field analyzer. After an extensive description of the setup and measurement procedure, we present and discuss the results in comparison to model calculations. Ab initio calculations of potential energy curves, including spin-orbit interactions, are performed and used to fit a four-state diabatic model. The experimental and theoretical single-electron-capture cross sections show good agreement and are found to have values in the range of 20–45 × 10−16 cm2 with a shallow maximum around 10 eV/u. We do not observe a significant difference between the cross sections for H2 and D2, as hinted at in our previous work at energies of 80–400 eV/u.

Original languageEnglish
Article number052806
Pages (from-to)1-10
Number of pages10
JournalPhysical Review A
Volume112
Issue number5
Early online date5 Nov 2025
DOIs
Publication statusPublished - Nov 2025

Bibliographical note

Publisher Copyright:
© (2025), (American Physical Society). All rights reserved.

Funding

The experimental work was carried out at the ZERNIKELEIF facility in the Zernike Institute for Advanced Materials of the University of Groningen as part of the research portfolio of the Advanced Research Center for Nanolithography (ARCNL), a public-private partnership between the University of Amsterdam, the Vrije Universiteit Amsterdam, the University of Groningen, the Netherlands organization for Scientific Research (NWO), and the semiconductor equipment manufacturer ASML. The computational support by the Centro de Computación Científica of UAM is also acknowledged.

Funders
Rijksuniversiteit Groningen
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Centro de Computación Científica

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