EUV spectroscopy of highly charged Sn13+-Sn15+ ions in an electron-beam ion trap

J. Scheers, C. Shah, A. Ryabtsev, H. Bekker, F. Torretti, J. Sheil, D. A. Czapski, J. C. Berengut, W. Ubachs, J. R.Crespo López-Urrutia, R. Hoekstra, O. O. Versolato

Research output: Contribution to JournalArticleAcademicpeer-review

Abstract

Extreme-ultraviolet (EUV) spectra of Sn13+-Sn15+ ions have been measured in an electron-beam ion trap (EBIT). A matrix inversion method is employed to unravel convoluted spectra from a mixture of charge states typically present in an EBIT. The method is benchmarked against the spectral features of resonance transitions in Sn13+ and Sn14+ ions. Three new EUV lines in Sn14+ confirm its previously established level structure. This ion is relevant for EUV nanolithography plasma but no detailed experimental data currently exist. We used the Cowan code for first line identifications and assignments in Sn15+. The collisional-radiative modeling capabilities of the Flexible Atomic Code were used to include line intensities in the identification process. Using the 20 lines identified, we have established 17 level energies of the 4p44d configuration as well as the fine-structure splitting of the 4p5 ground-state configuration. Moreover, we provide state-of-the-art ab initio level structure calculations of Sn15+ using the configuration-interaction many-body perturbation code ambit. We find that the here-dominant emission features from the Sn15+ ion lie in the narrow 2% bandwidth around 13.5 nm that is relevant for plasma light sources for state-of-the-art nanolithography.

Original languageEnglish
Article number062511
Pages (from-to)1-11
Number of pages11
JournalPhysical Review A
Volume101
Issue number6
Early online date15 Jun 2020
DOIs
Publication statusPublished - Jun 2020

Funding

Part of this work was carried out at the Advanced Research Center for Nanolithography, a public-private partnership between the University of Amsterdam, the Vrije Universiteit Amsterdam, the Netherlands Organization for Scientific Research (NWO), and the semiconductor equipment manufacturer ASML. This project has received funding from European Research Council (ERC) Starting Grant No. 802648 and is part of the VIDI research program with Project No. 15697, which is financed by NWO. J.S. and O.O.V. thank the MPIK in Heidelberg for the hospitality during the measurement campaign.

FundersFunder number
Horizon 2020 Framework Programme802648
European Research Council15697
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

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