Highly Emissive Self-Trapped Excitons in Fully Inorganic Zero-Dimensional Tin Halides

Bogdan M. Benin, Dmitry N. Dirin, Viktoriia Morad, Michael Wörle, Sergii Yakunin, Gabriele Rainò, Olga Nazarenko, Markus Fischer, Ivan Infante, Maksym V. Kovalenko*

*Corresponding author for this work

Research output: Contribution to JournalArticleAcademicpeer-review

Abstract

The spatial localization of charge carriers to promote the formation of bound excitons and concomitantly enhance radiative recombination has long been a goal for luminescent semiconductors. Zero-dimensional materials structurally impose carrier localization and result in the formation of localized Frenkel excitons. Now the fully inorganic, perovskite-derived zero-dimensional SnII material Cs4SnBr6 is presented that exhibits room-temperature broad-band photoluminescence centered at 540 nm with a quantum yield (QY) of 15±5 %. A series of analogous compositions following the general formula Cs4−xAxSn(Br1−yIy)6 (A=Rb, K; x≤1, y≤1) can be prepared. The emission of these materials ranges from 500 nm to 620 nm with the possibility to compositionally tune the Stokes shift and the self-trapped exciton emission bands.

Original languageEnglish
Pages (from-to)11329-11333
Number of pages5
JournalAngewandte Chemie. International Edition
Volume57
Issue number35
DOIs
Publication statusPublished - 27 Aug 2018

Keywords

  • luminescence
  • perovskites
  • self-trapped excitons
  • solid-state synthesis
  • tin

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