Nano-G accelerometer using geometric anti-springs

B. A. Boom*, A. Bertolini, E. Hennes, R. A. Brookhuis, R. J. Wiegerink, J. F J Van Den Brand, M. G. Beker, A. Oner, D. Van Wees

*Corresponding author for this work

Research output: Chapter in Book / Report / Conference proceedingConference contributionAcademicpeer-review

Abstract

We report an ultra-sensitive seismic accelerometer with nano-g sensitivity, using geometric anti-spring technology. High sensitivity is achieved by an on-chip mechanical preloading system comprising four sets of curved leaf springs that support a proof-mass. Using this preloading mechanism, stiffness reduction up to a factor 26 in the sensing direction has been achieved. This increases the sensitivity to acceleration by the same factor. The stiffness reduction is independent of the proof-mass position, preserving the linear properties of the mechanics and due to its purely mechanical realization, no power is consumed when the accelerometer is in its preloaded state. Equivalent acceleration noise levels below 2ng/√Hz have been demonstrated in a 50 Hz bandwidth, using a capacitive half-bridge read-out.

Original languageEnglish
Title of host publication2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Pages33-36
Number of pages4
ISBN (Electronic)9781509050789
DOIs
Publication statusPublished - 23 Feb 2017
Event30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States
Duration: 22 Jan 201726 Jan 2017

Conference

Conference30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
CountryUnited States
CityLas Vegas
Period22/01/1726/01/17

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Boom, B. A., Bertolini, A., Hennes, E., Brookhuis, R. A., Wiegerink, R. J., Van Den Brand, J. F. J., ... Van Wees, D. (2017). Nano-G accelerometer using geometric anti-springs. In 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017 (pp. 33-36). [7863332] Institute of Electrical and Electronics Engineers, Inc.. https://doi.org/10.1109/MEMSYS.2017.7863332