Nonlinear polarization rotation in semiconductor optical amplifiers: Theory and application to all-optical flip-flop memories

H.J.S. Dorren; D. Lenstra; Y.S. Liu; M. T. Hill; G.D. Khoe

doi:10.1109/JQE.2002.806200

Nonlinear polarization rotation in semiconductor optical amplifiers: Theory and application to all-optical flip-flop memories

H.J.S. Dorren
, D. Lenstra
, Y.S. Liu
, M. T. Hill
, G.D. Khoe

Research output: Contribution to Journal › Article › Academic › peer-review

Abstract

We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical amplifiers. We assume that the polarized optical field can be decomposed into transverse electric and transverse magnetic components that have indirect interaction with each other via the gain saturation. The gain anisotropy due to tensile strain in the amplifier is accounted for by a population imbalance factor. The model is applied to a nonlinear polarization switch, for which results are obtained, that are in excellent agreement with experimental data. Finally, we describe an all-optical flip-flop memory that is based on two coupled nonlinear polarization switches.

Original language	English
Pages (from-to)	141-148
Journal	IEEE Journal of Quantum Electronics
Volume	39
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2002.806200
Publication status	Published - 2003

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Nonlinear polarization rotation in semiconductor optical amplifiers: Theory and application to all-optical flip-flop memories

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SDG 7 Affordable and Clean Energy

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10.1109/JQE.2002.806200

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abstract = "We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical amplifiers. We assume that the polarized optical field can be decomposed into transverse electric and transverse magnetic components that have indirect interaction with each other via the gain saturation. The gain anisotropy due to tensile strain in the amplifier is accounted for by a population imbalance factor. The model is applied to a nonlinear polarization switch, for which results are obtained, that are in excellent agreement with experimental data. Finally, we describe an all-optical flip-flop memory that is based on two coupled nonlinear polarization switches.",

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AU - Dorren, H.J.S.

AU - Lenstra, D.

AU - Liu, Y.S.

AU - Hill, M. T.

AU - Khoe, G.D.

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PY - 2003

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AB - We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical amplifiers. We assume that the polarized optical field can be decomposed into transverse electric and transverse magnetic components that have indirect interaction with each other via the gain saturation. The gain anisotropy due to tensile strain in the amplifier is accounted for by a population imbalance factor. The model is applied to a nonlinear polarization switch, for which results are obtained, that are in excellent agreement with experimental data. Finally, we describe an all-optical flip-flop memory that is based on two coupled nonlinear polarization switches.

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DO - 10.1109/JQE.2002.806200

M3 - Article

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 1

ER -

Nonlinear polarization rotation in semiconductor optical amplifiers: Theory and application to all-optical flip-flop memories

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