Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime

M. J R Heck; A. Renault; E. A J M Bente; Y.S. Oei; M. K. Smit; K. S E Eikema; W. Ubachs; S. Anantathanasarn; R. Nötzel

Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime

M. J R Heck
, A. Renault
, E. A J M Bente
, Y.S. Oei
, M. K. Smit
, K. S E Eikema
, W. Ubachs
, S. Anantathanasarn
, R. Nötzel

Quantum Metrology & Laser Applications

Research output: Chapter in Book / Report / Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Passive mode-locking in two section InAs/InP (100) quantum dot lasers emitting around 1.53/μm is observed over a large operating regime. For absorber voltages of 0 V down to -3 V and for amplifier currents of 750 mA up to 1 A the fundamental RF-peak is over 40 dB above the noise floor.

Original language	English
Title of host publication	ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers
Pages	59-62
Number of pages	4
Publication status	Published - 2008
Event	14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers, ECIO'08 Eindhoven - Eindhoven, Netherlands Duration: 11 Jun 2008 → 13 Jun 2008

Conference

Conference	14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers, ECIO'08 Eindhoven
Country/Territory	Netherlands
City	Eindhoven
Period	11/06/08 → 13/06/08

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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Heck, M. J. R., Renault, A., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., Eikema, K. S. E., Ubachs, W., Anantathanasarn, S., & Nötzel, R. (2008). Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime. In ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers (pp. 59-62)

@inproceedings{305122612ce84f9480f8d6f3898ade83,

title = "Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime",

abstract = "Passive mode-locking in two section InAs/InP (100) quantum dot lasers emitting around 1.53/μm is observed over a large operating regime. For absorber voltages of 0 V down to -3 V and for amplifier currents of 750 mA up to 1 A the fundamental RF-peak is over 40 dB above the noise floor.",

author = "Heck, \{M. J R\} and A. Renault and Bente, \{E. A J M\} and Y.S. Oei and Smit, \{M. K.\} and Eikema, \{K. S E\} and W. Ubachs and S. Anantathanasarn and R. N{\"o}tzel",

year = "2008",

language = "English",

isbn = "9789038613178",

pages = "59--62",

booktitle = "ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers",

note = "14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers, ECIO'08 Eindhoven ; Conference date: 11-06-2008 Through 13-06-2008",

}

Heck, MJR, Renault, A, Bente, EAJM, Oei, YS, Smit, MK, Eikema, KSE , Ubachs, W, Anantathanasarn, S & Nötzel, R 2008, Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime. in ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers. pp. 59-62, 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers, ECIO'08 Eindhoven, Eindhoven, Netherlands, 11/06/08.

Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime. / Heck, M. J R; Renault, A.; Bente, E. A J M et al.
ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers. 2008. p. 59-62.

Research output: Chapter in Book / Report / Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime

AU - Heck, M. J R

AU - Renault, A.

AU - Bente, E. A J M

AU - Oei, Y.S.

AU - Smit, M. K.

AU - Eikema, K. S E

AU - Ubachs, W.

AU - Anantathanasarn, S.

AU - Nötzel, R.

PY - 2008

Y1 - 2008

N2 - Passive mode-locking in two section InAs/InP (100) quantum dot lasers emitting around 1.53/μm is observed over a large operating regime. For absorber voltages of 0 V down to -3 V and for amplifier currents of 750 mA up to 1 A the fundamental RF-peak is over 40 dB above the noise floor.

AB - Passive mode-locking in two section InAs/InP (100) quantum dot lasers emitting around 1.53/μm is observed over a large operating regime. For absorber voltages of 0 V down to -3 V and for amplifier currents of 750 mA up to 1 A the fundamental RF-peak is over 40 dB above the noise floor.

UR - https://www.scopus.com/pages/publications/58149118083

UR - https://www.scopus.com/pages/publications/58149118083#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:58149118083

SN - 9789038613178

SP - 59

EP - 62

BT - ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers

T2 - 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers, ECIO'08 Eindhoven

Y2 - 11 June 2008 through 13 June 2008

ER -

Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime

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UN SDGs

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