Phase change memory and its applications in hardware security

R.S. Khan; N. Noor; C. Jin; J. Scoggin; Z. Woods; S. Muneer; A. Ciardullo; P. Ha Nguyen; A. Gokirmak; M. Van Dijk; H. Silva

doi:10.1201/9781315265056

Phase change memory and its applications in hardware security

R.S. Khan, N. Noor, C. Jin, J. Scoggin, Z. Woods, S. Muneer, A. Ciardullo, P. Ha Nguyen, A. Gokirmak, M. Van Dijk, H. Silva

Research output: Chapter in Book / Report / Conference proceeding › Chapter › Academic › peer-review

Abstract

© 2018 by Taylor & Francis Group, LLC.Phase change memory (PCM) is an emerging resistive non-volatile memory technology [1]. Resistive switching memory structures are compact two-terminal devices that utilize reversible changes in resistance of a small volume of material through different mechanisms, such as magnetic switching (Magnetoresistive RAM) [2], electrothermal effects (PCM, memristors), or electrochemical effects (memristors). PCM utilizes the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in chalcogenide materials. There have been 94significant improvements in density and scaling of PCM devices in recent years. Successful scaling down to sub-5 nm heater sizes has been reported [3]. Micron launched the first PCM-based product for mobile devices in July 2012 with endurance >106cycles using 45 nm technology [4]. In recent years, IBM and Western Digital have showcased the potential of PCM as a replacement of NAND flash [5,6]. Innovative solutions to various problems that have been limiting large-scale implementation are being engineered, keeping PCM a strong competitor in the memory market [7].

Original language	English
Title of host publication	Security Opportunities in Nano Devices and Emerging Technologies
Publisher	CRC Press
Pages	93-114
ISBN (Electronic)	9781351965903
ISBN (Print)	9781138035775
DOIs	https://doi.org/10.1201/9781315265056
Publication status	Published - 1 Jan 2017
Externally published	Yes

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title = "Phase change memory and its applications in hardware security",

abstract = "{\textcopyright} 2018 by Taylor & Francis Group, LLC.Phase change memory (PCM) is an emerging resistive non-volatile memory technology [1]. Resistive switching memory structures are compact two-terminal devices that utilize reversible changes in resistance of a small volume of material through different mechanisms, such as magnetic switching (Magnetoresistive RAM) [2], electrothermal effects (PCM, memristors), or electrochemical effects (memristors). PCM utilizes the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in chalcogenide materials. There have been 94significant improvements in density and scaling of PCM devices in recent years. Successful scaling down to sub-5 nm heater sizes has been reported [3]. Micron launched the first PCM-based product for mobile devices in July 2012 with endurance >106cycles using 45 nm technology [4]. In recent years, IBM and Western Digital have showcased the potential of PCM as a replacement of NAND flash [5,6]. Innovative solutions to various problems that have been limiting large-scale implementation are being engineered, keeping PCM a strong competitor in the memory market [7].",

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AU - Khan, R.S.

AU - Noor, N.

AU - Jin, C.

AU - Scoggin, J.

AU - Woods, Z.

AU - Muneer, S.

AU - Ciardullo, A.

AU - Ha Nguyen, P.

AU - Gokirmak, A.

AU - Van Dijk, M.

AU - Silva, H.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - © 2018 by Taylor & Francis Group, LLC.Phase change memory (PCM) is an emerging resistive non-volatile memory technology [1]. Resistive switching memory structures are compact two-terminal devices that utilize reversible changes in resistance of a small volume of material through different mechanisms, such as magnetic switching (Magnetoresistive RAM) [2], electrothermal effects (PCM, memristors), or electrochemical effects (memristors). PCM utilizes the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in chalcogenide materials. There have been 94significant improvements in density and scaling of PCM devices in recent years. Successful scaling down to sub-5 nm heater sizes has been reported [3]. Micron launched the first PCM-based product for mobile devices in July 2012 with endurance >106cycles using 45 nm technology [4]. In recent years, IBM and Western Digital have showcased the potential of PCM as a replacement of NAND flash [5,6]. Innovative solutions to various problems that have been limiting large-scale implementation are being engineered, keeping PCM a strong competitor in the memory market [7].

AB - © 2018 by Taylor & Francis Group, LLC.Phase change memory (PCM) is an emerging resistive non-volatile memory technology [1]. Resistive switching memory structures are compact two-terminal devices that utilize reversible changes in resistance of a small volume of material through different mechanisms, such as magnetic switching (Magnetoresistive RAM) [2], electrothermal effects (PCM, memristors), or electrochemical effects (memristors). PCM utilizes the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in chalcogenide materials. There have been 94significant improvements in density and scaling of PCM devices in recent years. Successful scaling down to sub-5 nm heater sizes has been reported [3]. Micron launched the first PCM-based product for mobile devices in July 2012 with endurance >106cycles using 45 nm technology [4]. In recent years, IBM and Western Digital have showcased the potential of PCM as a replacement of NAND flash [5,6]. Innovative solutions to various problems that have been limiting large-scale implementation are being engineered, keeping PCM a strong competitor in the memory market [7].

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Phase change memory and its applications in hardware security

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