Abstract
We demonstrate the efficient generation of extreme ultraviolet (EUV) light from laser-produced plasma (LPP) driven by 2 μm wavelength laser light as an alternative for 10 μm CO2 gas LPP currently employed in EUV lithography machines for high-volume manufacturing of semiconductor devices. High conversion efficiencies of laser light into “in-band” EUV photons up to 5.0% are achieved by homogeneously heating the plasma that is laser-generated from preshaped tin microdroplet targets. Scaling the laser pulse duration, spot size, and intensity yields a high in-band EUV energy output of up to 12.5 mJ. The EUV emission source size is studied under a similar parameter range and is shown to match typical etendues of EUV optic columns. Our findings make 2 μm LPP a particularly promising candidate to power future EUV nanolithography.
Original language | English |
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Article number | 234101 |
Journal | Applied Physics Letters |
Volume | 123 |
Issue number | 23 |
DOIs | |
Publication status | Published - 4 Dec 2023 |
Bibliographical note
Special Collection: Plasma Sources for Advanced Semiconductor ApplicationsFunding
We would like to thank Iliya Cerjak and Henk-Jan Boluijt for their work in designing the experimental setup and Laurens van Buuren for the aid in assembling the setup and its operation. We would like to further thank Ruben Schupp and Muharrem Bayraktar for their help with the experimental work as well as Lucas Poirier and Michael Purvis for helpful discussions. This research was funded by the European Research Council (ERC StG 802648) and the Dutch Research Council (Vidi 15697 and OTP 19458).
Funders | Funder number |
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European Research Council | 802648 |
Nederlandse Organisatie voor Wetenschappelijk Onderzoek | OTP 19458, 15697 |