Abstract
We investigate the effect of molecular doping on the recombination of electrons and holes localized at conjugated-polymer–fullerene interfaces. We demonstrate that a low concentration of p-type dopant molecules (<4% weight) reduces the interfacial recombination via charge transfer excitons and results in a favored formation of separated carriers. This is observed by the ultrafast quenching of photoluminescence from charge transfer excitons and the increase in photoinduced polaron density by ∼70%. The results are consistent with a reduced formation of emissive charge transfer excitons, induced by state filling of tail states.
Original language | English |
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Article number | 127402 |
Journal | Physical Review Letters |
Volume | 107 |
Issue number | 12 |
DOIs | |
Publication status | Published - 15 Sept 2011 |