Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors

D. G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. Liu, M. Buchanan

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Abstract

The room-temperature absorption and reflection spectra for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors were presented. The results calculated based on the free carrier absorption and interaction with optical phonons were in good agreement with the experimental results. It was demonstrated that the resonance cavity architecture could be used to improve the responsivity at specific wavelengths.
Original languageEnglish
Pages (from-to)1879-1883
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number4
DOIs
Publication statusPublished - 2003

Bibliographical note

Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors

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