Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors

D. G. Esaev; S. G. Matsik; M. B. M. Rinzan; A. G. U. Perera; H. Liu; M. Buchanan

doi:10.1063/1.1539918

Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors

D. G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. Liu, M. Buchanan

Physics of Living Systems

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Abstract

The room-temperature absorption and reflection spectra for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors were presented. The results calculated based on the free carrier absorption and interaction with optical phonons were in good agreement with the experimental results. It was demonstrated that the resonance cavity architecture could be used to improve the responsivity at specific wavelengths.

Original language	English
Pages (from-to)	1879-1883
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.1539918
Publication status	Published - 2003

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Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors

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abstract = "The room-temperature absorption and reflection spectra for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors were presented. The results calculated based on the free carrier absorption and interaction with optical phonons were in good agreement with the experimental results. It was demonstrated that the resonance cavity architecture could be used to improve the responsivity at specific wavelengths.",

author = "Esaev, {D. G.} and Matsik, {S. G.} and Rinzan, {M. B. M.} and Perera, {A. G. U.} and H. Liu and M. Buchanan",

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AU - Esaev, D. G.

AU - Matsik, S. G.

AU - Rinzan, M. B. M.

AU - Perera, A. G. U.

AU - Liu, H.

AU - Buchanan, M.

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Y1 - 2003

N2 - The room-temperature absorption and reflection spectra for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors were presented. The results calculated based on the free carrier absorption and interaction with optical phonons were in good agreement with the experimental results. It was demonstrated that the resonance cavity architecture could be used to improve the responsivity at specific wavelengths.

AB - The room-temperature absorption and reflection spectra for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors were presented. The results calculated based on the free carrier absorption and interaction with optical phonons were in good agreement with the experimental results. It was demonstrated that the resonance cavity architecture could be used to improve the responsivity at specific wavelengths.

U2 - 10.1063/1.1539918

DO - 10.1063/1.1539918

M3 - Article

SN - 0021-8979

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SP - 1879

EP - 1883

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors

Abstract

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