Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

W. Wang; K. Allaart; D. Lenstra

doi:10.1049/el:20046945

Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

W. Wang
, K. Allaart
, D. Lenstra

Research output: Contribution to Journal › Article › Academic › peer-review

Abstract

It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.

Original language	English
Pages (from-to)	1602-1603
Journal	Electronics Letters
Volume	40
Issue number	25
DOIs	https://doi.org/10.1049/el:20046945
Publication status	Published - 2004

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Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

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SDG 7 Affordable and Clean Energy

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10.1049/el:20046945

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title = "Semiconductor optical amplifier gain anisotropy: confinement factor against material gain",

abstract = "It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.",

author = "W. Wang and K. Allaart and D. Lenstra",

note = "Semiconductor optical amplifier gain anisotropy: confinement factor against material gain",

year = "2004",

doi = "10.1049/el:20046945",

language = "English",

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pages = "1602--1603",

journal = "Electronics Letters",

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T1 - Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

AU - Wang, W.

AU - Allaart, K.

AU - Lenstra, D.

N1 - Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

PY - 2004

Y1 - 2004

N2 - It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.

AB - It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.

U2 - 10.1049/el:20046945

DO - 10.1049/el:20046945

M3 - Article

SN - 0013-5194

VL - 40

SP - 1602

EP - 1603

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

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