Abstract
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-locked laser which shows extra broad frequency comb generation. The ring laser was characterized in frequency and time domains for a range of the current levels injected in the semiconductor optical amplifier. The study showed an increase of the bandwidth to over 40 nm at the −20 dB
−20 dB level. The coherence between the longitudinal modes in the wide comb is demonstrated by the characterization of a spectrally filtered signal in time and RF domains. The relative time delay across the optical comb was measured.
−20 dB level. The coherence between the longitudinal modes in the wide comb is demonstrated by the characterization of a spectrally filtered signal in time and RF domains. The relative time delay across the optical comb was measured.
Original language | English |
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Pages (from-to) | 1428-1431 |
Number of pages | 6 |
Journal | Optics Letters |
Volume | 42 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1 Apr 2017 |
Funding
Stichting voor de Technische Wetenschappen (STW) (Memphis II project 13533) "Chipbased optical frequency combs."
Funders | Funder number |
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Stichting voor de Technische Wetenschappen | 13533 |
Keywords
- (140.4050) Mode-locked lasers
- (250.4390) Nonlinear optics integrated optics
- (250.5300) Photonic integrated circuits