Temperature dependence of magnetoresistance and Hall effect in Mg2NiHx films

S. Enache, W. Lohstroh, R.P. Griessen

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Original language	English
Journal	Physical Review B. Condensed Matter and Materials Physics
Volume	69
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.69.115326
Publication status	Published - 2004

Times Cited: 15

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title = "Temperature dependence of magnetoresistance and Hall effect in Mg2NiHx films",

author = "S. Enache and W. Lohstroh and R.P. Griessen",

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language = "English",

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journal = "Physical Review B. Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

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TY - JOUR

T1 - Temperature dependence of magnetoresistance and Hall effect in Mg2NiHx films

AU - Enache, S.

AU - Lohstroh, W.

AU - Griessen, R.P.

N1 - Times Cited: 15

PY - 2004

Y1 - 2004

U2 - 10.1103/PhysRevB.69.115326

DO - 10.1103/PhysRevB.69.115326

M3 - Article

SN - 1098-0121

VL - 69

JO - Physical Review B. Condensed Matter and Materials Physics

JF - Physical Review B. Condensed Matter and Materials Physics

IS - 11

ER -