The Effect of Electrostatic Interaction on n-Type Doping Efficiency of Fullerene Derivatives

Jian Liu, Sudeshna Maity, Nathan Roosloot, Xinkai Qiu, Li Qiu, Ryan C. Chiechi, Jan C. Hummelen, Elizabeth von Hauff, L. Jan Anton Koster

Research output: Contribution to JournalArticleAcademicpeer-review

Original languageEnglish
Pages (from-to)1800959
JournalAdvanced Electronic Materials
DOIs
Publication statusPublished - 22 Feb 2019

Cite this

Liu, Jian ; Maity, Sudeshna ; Roosloot, Nathan ; Qiu, Xinkai ; Qiu, Li ; Chiechi, Ryan C. ; Hummelen, Jan C. ; von Hauff, Elizabeth ; Koster, L. Jan Anton. / The Effect of Electrostatic Interaction on n-Type Doping Efficiency of Fullerene Derivatives. In: Advanced Electronic Materials. 2019 ; pp. 1800959.
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The Effect of Electrostatic Interaction on n-Type Doping Efficiency of Fullerene Derivatives. / Liu, Jian; Maity, Sudeshna; Roosloot, Nathan; Qiu, Xinkai; Qiu, Li; Chiechi, Ryan C.; Hummelen, Jan C.; von Hauff, Elizabeth; Koster, L. Jan Anton.

In: Advanced Electronic Materials, 22.02.2019, p. 1800959.

Research output: Contribution to JournalArticleAcademicpeer-review

TY - JOUR

T1 - The Effect of Electrostatic Interaction on n-Type Doping Efficiency of Fullerene Derivatives

AU - Liu, Jian

AU - Maity, Sudeshna

AU - Roosloot, Nathan

AU - Qiu, Xinkai

AU - Qiu, Li

AU - Chiechi, Ryan C.

AU - Hummelen, Jan C.

AU - von Hauff, Elizabeth

AU - Koster, L. Jan Anton

PY - 2019/2/22

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UR - http://www.mendeley.com/research/effect-electrostatic-interaction-ntype-doping-efficiency-fullerene-derivatives

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M3 - Article

SP - 1800959

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

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