The effects of light-heavy hole transitions on the cutoff wavelengths of far infrared detectors

A. G. U. Perera, S. G. Matsik, M. B. M. Rinzan, A. B. Weerasekara, M. Alevli, H. Liu, M. Buchanan, B. Zvonkov, V. I. Gavrilenko

Research output: Contribution to JournalArticleAcademicpeer-review

Abstract

Results are presented on the effects of doping variation on the cutoff wavelength (λc) of homojunction interfacial workfunction internal photoemission far infrared detectors. The behavior at low doping (<1019 cm−3) is well predicted by the free carrier absorption model used previously. However at high doping the observed λc is much shorter than the values predicted by the workfunction obtained from Arrhenius plots. An explanation for the reduced λc in the high doping region is presented using a model for depletion of the heavy hole band due to direct transitions from the heavy hole to light hole band.
Original languageEnglish
Pages (from-to)347-353
Number of pages7
JournalInfrared Physics and Technology
Volume44
Issue number5/6
Early online date13 Aug 2003
DOIs
Publication statusPublished - Oct 2003

Bibliographical note

Part of special issue: Proceedings of the Workshop on Quantum Well Infrared Photodetectors. Edited by G.Sarusi, A.Carbone, S.D.Gunapala and H.C.Liu

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