Results are presented on the effects of doping variation on the cutoff wavelength (λc) of homojunction interfacial workfunction internal photoemission far infrared detectors. The behavior at low doping (<1019 cm−3) is well predicted by the free carrier absorption model used previously. However at high doping the observed λc is much shorter than the values predicted by the workfunction obtained from Arrhenius plots. An explanation for the reduced λc in the high doping region is presented using a model for depletion of the heavy hole band due to direct transitions from the heavy hole to light hole band.
|Number of pages||7|
|Journal||Infrared Physics and Technology|
|Early online date||13 Aug 2003|
|Publication status||Published - Oct 2003|