Ultrafast Permittivity Engineering Enables Broadband Enhancement and Spatial Emission Control of Harmonic Generation in ZnO

  • Zhonghui Nie*
  • , Kevin Murzyn
  • , Leo Guery
  • , Thomas J. van den Hooven
  • , Peter M. Kraus*
  • *Corresponding author for this work

Research output: Contribution to JournalArticleAcademicpeer-review

Abstract

Moderate efficiencies of nonlinear optical processes can be one of the challenges limiting even more widespread applications. Here we demonstrate a broadband and giant enhancement of nonlinear processes in ZnO through ultrafast permittivity engineering. A remarkable enhancement of the second and third harmonic generation of up to 2 orders of magnitude can be observed over a broadband range of driving wavelengths. Moreover, this nonlinearity enhancement is reversible with a recovery time of ∼120 fs. Additional experiments and simulations confirm that the observed enhancement originates from a permittivity change induced by the photocarrier population. Our results provide the opportunity to actively customize materials with a larger nonlinearity for nanophotonics on ultrafast time scales over broadband wavelength ranges. Utilizing this finding, we also demonstrate a relevant application, where a transient wave-guiding effect is induced by a donut-shaped photocarrier-excitation pulse, which both reduces the width of the spatial profile of harmonic emission below the diffraction limit and simultaneously increases its central emission strength.

Original languageEnglish
Pages (from-to)5084-5090
Number of pages7
JournalACS Photonics
Volume11
Issue number12
Early online date15 Nov 2024
DOIs
Publication statusPublished - 18 Dec 2024

Bibliographical note

Publisher Copyright:
© 2024 The Authors. Published by American Chemical Society.

Funding

This work was conducted at the Advanced Research Center for Nanolithography, a public-private partnership between the University of Amsterdam (UvA), Vrije Universiteit Amsterdam (VU), Rijksuniversiteit Groningen (RUG), The Netherlands Organization for Scientific Research (NWO), and the semiconductor equipment manufacturer ASML and was (partly) financed by ‘Toeslag voor Topconsortia voor Kennis en Innovatie (TKI)’ from the Dutch Ministry of Economic Affairs and Climate Policy. This manuscript is part of a project that has received funding from the European Research Council (ERC) under the European Union’s Horizon Europe research and innovation programme (grant agreement no. 101041819, ERC Starting Grant ANACONDA). Z.N., L.G., and P.M.K. acknowledge support from the Open Technology Programme (OTP) by NWO, grant no. 18703. The project is also part of the VIDI research programme HIMALAYA with project number VI.Vidi.223.133 financed by NWO. The Advanced Research Center for Nanolithography, a public-private partnership between the University of Amsterdam (UvA), Vrije Universiteit Amsterdam (VU), Rijksuniversiteit Groningen (RUG), The Netherlands Organization for Scientific Research (NWO) and the semiconductor equipment manufacturer ASML. ‘Toeslag voor Topconsortia voor Kennis en Innovatie (TKI)’ from the Dutch Ministry of Economic Affairs and Climate Policy. Horizon Europe research and innovation program (grant agreement no. 101041819, ERC Starting Grant ANACONDA). Open Technology Programme (OTP) by NWO, grant no. 18703. VIDI research program HIMALAYA with project number VI.Vidi.223.133 financed by NWO.

FundersFunder number
Toeslag voor Topconsortia voor Kennis en Innovatie
European Union’s Horizon Europe research and innovation programme
Rijksuniversiteit Groningen
Ministerie van Economische Zaken en Klimaat
European Research Council
Universiteit van Amsterdam
European Commission101041819
Horizon Europe research and innovation program101041819
Nederlandse Organisatie voor Wetenschappelijk Onderzoek18703

    Keywords

    • epsilon near zero
    • high harmonic generation
    • microscopy
    • Nonlinear optics
    • permittivity engineering
    • ultrafast modulation

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