Understanding the open circuit voltage in organic solar cells on the basis of a donor-acceptor abrupt (p-n++) heterojunction

J. C. Nolasco*, A. Castro-Carranza, Y. A. León, C. Briones-Jurado, J. Gutowski, J. Parisi, E. von Hauff

*Corresponding author for this work

Research output: Contribution to JournalArticleAcademicpeer-review

59 Downloads (Pure)

Abstract

By using electrical characterization and classical solid state semiconductor device theory, we demonstrate that the open circuit voltage (V oc ) in organic solar cells based on non-intentional doped semiconductors is fundamentally limited by the built-in potential (V bi ) originated at a donor-acceptor abrupt (p-n ++ ) heterojunction in case of selective contacts. Our analysis is validated using P3HT:PCBM devices fabricated in our research group. We also demonstrate that such a result can be generalized using data already reported in literature for fullerene-based solar cells. Finally, we show that the dependence of V oc on the device contacts can be understood in terms of the potential barriers formed by the Fermi level alignment of semiconductors at the heterojunction and at the Schottky junctions.

Original languageEnglish
Pages (from-to)610-619
Number of pages10
JournalSolar Energy
Volume184
Early online date13 Apr 2019
DOIs
Publication statusPublished - 15 May 2019

Keywords

  • Band bending
  • Open circuit voltage
  • Organic heterojunction

Fingerprint Dive into the research topics of 'Understanding the open circuit voltage in organic solar cells on the basis of a donor-acceptor abrupt (p-n++) heterojunction'. Together they form a unique fingerprint.

Cite this